Ali, WR and Raunak, A and Prasad, M
(2021)
Study of the Effects of Annealing Temperature on the Properties of Piezoelectric ZnO Thin Film for the Development of MEMS Acoustic Sensor.
In: International Conference on Advances in Materials Science, Communication and Microelectronics (ICAMCM-2021), February 19-20, 2021, JECRC Foundation, Jaipur, Rajasthan.
Abstract
This paper reports deposition and characterization of Zinc oxide (ZnO) thin film to be used as sensing layer in an acoustic sensor. An important requirement for such devices is the presence of high c-axis orientation and low stress in the deposited ZnO film. For this purpose, annealing of the deposited films is very much necessary. Here, zinc oxide thin films have been deposited over oxidized Si(100) wafer using radio frequency (RF) magnetron sputtering method and are annealed at different temperatures from 200 - 400°C in steps of 50°C. Different micro-structural parameters such as grain size, surface roughness, dislocation density and stress have been determined to obtain the optimized annealing temperature for the thin film. The optimization of the annealing temperature is necessary to obtain ZnO thin film with better piezoelectric response. Surface roughness has also been determined from AFM measurements. The XRD study indicates that the intensity of (002) peak changes with annealing temperature. Grain size increases from 15.46nm to 18.24nm and dislocation density decreases to minimum value ~3.006 x 10-3nm-2 as temperature is increased to 400°C. Stress is also minimum at temperatures of 350 - 400°C. An annealing temperature of approx. 350° C has been found to be optimum for ZnO film to be used in acoustic sensor.
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