Curling Controlled Bilayer Structure for Low Actuation Voltage RF MEMS Switch

Mehta, Khushbu and Kaur, M and Bansal, D and Kumar, A and Rangra, K (2019) Curling Controlled Bilayer Structure for Low Actuation Voltage RF MEMS Switch. In: I W P S D 2017, December 11-15, 2017, IIT Delhi. (Submitted)

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Abstract

AbStLOCt— ln general, RF MEMS devices are made up of gold which get curled up during fabrication. Operating voltage of RF MEMS switches is a function of buckling of structure. These curled up MEMS structures show increased pull-in voltage. Gold shows inbuilt tensile stress. A compressive Polysilicon of poly silicon is deposited over gold layer to overcome buckling in MEMS structures. Single-layer of gold shows deflection of 18.9 pm and bilayer of polysilicon over gold reduced to deflection of 9.35 pm with overall reduction of 50.5%.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Keywords: RFMEMS, Buckling, Pull-In Voltage,Compressive Stress, Tensile Stress.
Subjects:	Semiconductor Devices > Sensors and Nanotechnology
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rabin Chatterjee
Date Deposited:	04 Dec 2019 09:16
Last Modified:	04 Dec 2019 09:16
URI:	http://ceeri.csircentral.net/id/eprint/344

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