Thermoelectric performance improvement in engineered amorphous Silicon

Pal, S and Zhang, Z and Banerjee, D (2019) Thermoelectric performance improvement in engineered amorphous Silicon. In: XIX International workshop on The Physics of Semi. Devices (IWPSD) 2017, December 11-15 , 2017, New Delhi. (Submitted)

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Abstract

Abstract— This report presents exciting advances in the tield of engineerecl thermoelectric materials that are clean and which involve techniques compatible with standard Sil icon processing. We observe thermoelectric fig ure of merit 0.2 at room temperature for n-doped amorphous(a)-Si brought about by en- hancement of the electrical conductivity w1a ile the inherently adsantageous at- tributes of a-Si are retained in terms of I ow thermal conductivity and high See- beck coefficient

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Keywords: amorphous Silicon, thenroelectric, figure ot merit
Subjects:	Microwave Tubes > Magnetrons
Divisions:	Microwave Tubes
Depositing User:	Mr. Rabin Chatterjee
Date Deposited:	04 Dec 2019 09:16
Last Modified:	04 Dec 2019 09:16
URI:	http://ceeri.csircentral.net/id/eprint/343

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