Fabrication and Characterization of Al gate n-MOSFET, On-chip Fabricated with Si3N4 ISFET

Chaudhary, R and Sharma, A and Sinha, S and Yadav, J and Sharma, R and Mukhiya, R and Khanna, VK (2015) Fabrication and Characterization of Al gate n-MOSFET, On-chip Fabricated with Si3N4 ISFET. In: 4th International Symposium on VLSI Design & Test (VDAT 2015), June 26-27, 2015, Institute of Technology, Nirma University, Ahmedabad. (Submitted)

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Abstract

This paper reports the fabrication of n-type MOSFET using Si3N4 as dielectric on the same chip as ISFET for ISFET characterization. The paper presents the fabrication, simulation and characterization of metal-oxide field-effect transistor (MOSFET). The gate of the ISFET is stacked with Si3N4 sensing membrane layer that has been deposited using LPCVD system to cover the gate area. Output and transfer characteristics of on-chip fabricated MOSFET are obtained and measured in order to study the fabricated ISFET behavior to be used as pH sensor. Silicon nitride is preferred over silicon dioxide sensing film/dielectric (in case of MOSFET) which has better sensitivity and low drift. Process simulations were performed using Silvaco® TCAD tool.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	MOSFET, ISFET, Si3N4, Silvaco®
Subjects:	Semiconductor Devices > MEMS and Microsensors
Divisions:	Semiconductor Devices
Depositing User:	Mr. Jitendra Nath Bajpai
Date Deposited:	11 Jan 2017 10:09
Last Modified:	11 Jan 2017 10:09
URI:	http://ceeri.csircentral.net/id/eprint/251

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