Kumar, M and Swami, A and Sharma, JVNR and Laxmi, S and Kumar, P and Khanna, VK (2010) Effect of RF Power on the Composition of the Sputtered Thin Film Deposition. In: International Conference on Nanosensors & Technology (ICNST 2010), October 28-30, 2010, CSIO, Chandigarh. (Submitted)
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Abstract
To sputter deposit the thin film of Al-Si-Cu of the same composition as that of the target, one has to optimize the sputtering process parameter like Argon gas pressure, gap between the sample and the target, sputtering power. We have deposited the sputtered thin film of Al-Si-Cu using RF magnetron sputtering having the same composition as that of the target, keeping RF sputtering power as the main parameter. We have also optimized the sputtering process to achieve good uniformity, step coverage and reproducibility. To characterize the sputtered thin film we have used surface profiler, scanning electron microscope and wet chemical etching. Large numbers of experiments were carried out and the result is presented in this paper.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | ?? TK ?? Semiconductor Devices > MEMS and Microsensors |
| Divisions: | Semiconductor Devices |
| Depositing User: | Mr. Rabin Chatterjee |
| Date Deposited: | 23 May 2013 05:12 |
| Last Modified: | 23 May 2013 05:12 |
| URI: | http://ceeri.csircentral.net/id/eprint/102 |
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