Low Stress ZnO Thin Film for MEMS/NEMS Devices


Downloads per month over past year

Singh, J (2019) Low Stress ZnO Thin Film for MEMS/NEMS Devices. In: 10th International Conference on Materials for Advanced Technologies, 23-28 June 2019, Singapore.

Download (8Mb) | Preview


Role of oxygen partial pressure (R02) have been investigated on structural, optical and mechanical properties of ZnO films. Oxygen partial pressure was varied 30%-60% and c-axis oriented ZnO (002) thin films were prepared at room temperature. The stress varies in -0.06x109 dyne/cm2 to -2.27x 109 dyne/cm2 range, and compressive in nature. Grain size and surface roughness improved with oxygen content due to reduced oxygen vacancies. ZnO infrared vibration bands (413 cm-1), shows decrease in FWHM due to improved crystallinity. Theoretical model has been proposed to understand consequences of oxygen induced stress in ZnO thin films. It is established that in-plane residual stress strongly depends on R02 and minimal stress films can be obtained for 40% oxygen partial pressure.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Smart Sensors Area
Subjects: Semiconductor Devices > MEMS and Microsensors
Semiconductor Devices > Sensors and Nanotechnology
Divisions: Semiconductor Devices
Depositing User: Mr. Jitendra Nath Bajpai
Date Deposited: 27 Aug 2021 06:21
Last Modified: 27 Aug 2021 06:21
URI: http://ceeri.csircentral.net/id/eprint/460

Actions (login required)

View Item View Item