Low Stress ZnO Thin Film for MEMS/NEMS Devices

Singh, J (2019) Low Stress ZnO Thin Film for MEMS/NEMS Devices. In: 10th International Conference on Materials for Advanced Technologies, 23-28 June 2019, Singapore.

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Abstract

Role of oxygen partial pressure (R02) have been investigated on structural, optical and mechanical properties of ZnO films. Oxygen partial pressure was varied 30%-60% and c-axis oriented ZnO (002) thin films were prepared at room temperature. The stress varies in -0.06x109 dyne/cm2 to -2.27x 109 dyne/cm2 range, and compressive in nature. Grain size and surface roughness improved with oxygen content due to reduced oxygen vacancies. ZnO infrared vibration bands (413 cm-1), shows decrease in FWHM due to improved crystallinity. Theoretical model has been proposed to understand consequences of oxygen induced stress in ZnO thin films. It is established that in-plane residual stress strongly depends on R02 and minimal stress films can be obtained for 40% oxygen partial pressure.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Smart Sensors Area
Subjects:	Semiconductor Devices > MEMS and Microsensors Semiconductor Devices > Sensors and Nanotechnology
Divisions:	Semiconductor Devices
Depositing User:	Mr. Jitendra Nath Bajpai
Date Deposited:	27 Aug 2021 06:21
Last Modified:	27 Aug 2021 06:21
URI:	http://ceeri.csircentral.net/id/eprint/460

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