Recess Dependent AlGaN/GaN HEMTs Performance

Sharma, N and Joshi, D and Chaturvedi, N and Chaturvedi, N (2012) Recess Dependent AlGaN/GaN HEMTs Performance. In: International Conference on Emerging Technologies: Micro to Nano (ETMN - 2013), February 23-24, 2013, KK Birla, Goa .

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Recess technologies in GaN HEMTs were simulated to check their effect on device performance. Gate recess improved device transconductance. However the drain current reduced. Ohmic recess improved drain current but devices suffered with high gate leakage current. Different recess depths combinations were next simulated. A combination of 10 nm Gate recess together with a 10 nm Ohmic recess showed a balanced good drain current as well as transconductance without any leakage. An optimized critical Gate recess depth in combination to the Ohmic recess depth proved to be a key factor for good Ids and gm without gate leakage.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: GaN HEMTs, Gate recess, Ohmic recess, Gate leakage,
Subjects: ?? TK ??
Semiconductor Devices > Optoelectronic Devices
Divisions: Semiconductor Devices
Depositing User: Mr. Rohit Singh
Date Deposited: 24 May 2013 06:14
Last Modified: 24 May 2013 06:14

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