Electrical Characterization of Thin Thermally Grown SiO2 on Epitaxial 4H-SiC (0001) Substrate with Varying Oxide Thickness

Gupta, SK and Azam, A and Akhtar, J (2009) Electrical Characterization of Thin Thermally Grown SiO2 on Epitaxial 4H-SiC (0001) Substrate with Varying Oxide Thickness. In: 12th International Symposium on Microwave and Optical Tech (ISMOT-2009), December 16-19, 2009, New Delhi. (Submitted)

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Abstract

Electrical conduction across thermally grown silicon dioxide on Si-rich 4H-SiC (0001) surface has been experimentally analyzed on the basis of measured I-V characteristics for varying oxide thickness from 23 nm to 61.4 nm. Validity of current conduction mechanisms involving Fowler-Nordheim (F-N) tunneling, Schottky emission (S-E) and Poole-Frenkel (P-F) conduction has been established quantitatively on the basis of electric field and the oxide thickness employing forward I-V characteristics. F-N tunneling has been found valid for all fields in case of oxide thickness below 30 nm. For thicker oxides (up to 56.6 nm) F-N tunneling occurs in presence of high electric fields only, exposed a bulk limited conduction mechanism. An electrode limited conduction mechanism has been observed in case of Schottky emission and Poole-Frenkel conduction. At lower fields Schottky emission dominates because effective conductivity depends strongly on the barrier between the metal and insulator and has the proclivity to occur for insulators with fewer defects while Poole-Frenkel conduction takes place at higher electric fields due to field-enhanced excitation of trapped charge in to the conduction band of SiO2 indicate the presence of electron traps in bulk of thermally grown SiO2.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	4H-SiC; wet oxidation; MOSiC structure; conduction mechanism
Subjects:	?? TK ?? Semiconductor Devices > Sensors and Nanotechnology
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rohit Singh
Date Deposited:	22 May 2013 11:40
Last Modified:	22 May 2013 11:40
URI:	http://ceeri.csircentral.net/id/eprint/131

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