Design of Compact, High Capacitance Ratio MEMS switch for X - Band Applications using High-k Dielectric Materials

Maninder, K and Rangra, KJ and Sharma, A and Kumar, D and Singh, S (2010) Design of Compact, High Capacitance Ratio MEMS switch for X - Band Applications using High-k Dielectric Materials. In: Tech Connect World Conference & Expo 2010, June 21-25, 2010, Anaheim, California (U.S.A.). (Submitted)

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Abstract

The paper discusses the design aspects of capacitive RF MEMS Symmetric Toggle Switch (STS) with particular emphasis on device compactness, reliability, and improvement in isolation & insertion loss by incorporating hafnium dioxide (HfO2) as a dielectric material. The major impact of the change from SiO2 to HfO2 having dielectric constant of 20, is the reduction in overall dimensions of the switch; capacitive overlap area is reduced by 75% leading to overall reduction of about 50%. Significant improvement in isolation (-43dB) and insertion loss (-0.014dB), at 11 GHz with 50 nm thick HfO2 as a dielectric layer compared to -29 dB and -0.016 dB @ 11 GHz respectively for SiO2 makes hafnium dioxide an attractive dielectric for RF micro-electro-mechanical systems (MEMS) switch for new generation of low-loss high-linearity microwave circuits.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	symmetric toggle switch, RF MEMS switch, insertion loss, isolation, dielectric, hafnium oxide.
Subjects:	?? TK ?? Semiconductor Devices > MEMS and Microsensors Semiconductor Devices > Sensors and Nanotechnology
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rabin Chatterjee
Date Deposited:	21 May 2013 09:44
Last Modified:	21 May 2013 09:45
URI:	http://ceeri.csircentral.net/id/eprint/83

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