Design Methodology of Backside Contacted ISFETs using Deep Diffusion

Saxena, N and Nitharwal, M and Chaturvedi, A and Khanna, VK and Sharma, R and Mukhiya, R (2012) Design Methodology of Backside Contacted ISFETs using Deep Diffusion. In: National Conference on Role of Electronics and Instrumentation for Rural Development (NCREIE - 2012), February 27 - 28, 2012, Jaipur, India. (Submitted)

Preview

PDF - Submitted Version Download (326Kb) | Preview

Abstract

Design approach of the fabrication method for Ion-Sensitive Field-Effect Transistor (ISFET) structures with contact pads located at back–passive side of the device is presented. In this approach, FET structure will be constructed on the front face of the chip. The connections between the source and the drain diffusion and the back contacts will be achieved by diffusing impurities from both sides of the wafer. The front surface has an insulating surface where the chemically active gate is placed. The device thus acts as a chemical sensor. This contrasts with traditional devices where the gate and the contacts are placed on the front surface of the transistor. This device will feature anisotropically etched cavities from the back side of the wafer to ensure electrical connections through the silicon wafer. These sensors will be more compact, easily mounted and will not have encapsulation problem; however, the fabrication technology will be more complex.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	ISFETs, Back Contacts, Deep Diffusion,
Subjects:	?? TK ?? Semiconductor Devices > MEMS and Microsensors
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rohit Singh
Date Deposited:	20 May 2013 09:54
Last Modified:	20 May 2013 09:54
URI:	http://ceeri.csircentral.net/id/eprint/78

Actions (login required)

View Item