Effect of Underlying Silicon On Performance of Film Bulk Acoustic Resonator (FBAR)

Kumar, A and Singh, J (2020) Effect of Underlying Silicon On Performance of Film Bulk Acoustic Resonator (FBAR). In: National Conference on Advances in Materials Science and Technology (NCAMST-2020), February 29 To March 1, 2020, UOR Jaipur, Rajathan, India.

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Abstract

We have realized Barium Strontium Titanate (BST) and Zinc Oxide (ZnO) thin film based Film Bulk Acoustic Resonators (FBAR). The resonator layer-stack consists of BST/ZnO bilayer films and used as a piezoelectric layer. The Resonator was fabricated using a standard Silicon Microel ectromechanical Systems (MEMS) microfabrication process. Platinum (Pt) was used as electrode material due to its high acoustic impedance (84.74x105 g/cm2-Sec) and its ability to withstand high temperature. Experimentally, it is found that the underlying Silicon has a large effect on the resonance frequency, it was upshifted (1.648 GHz) after complete Si removal. Electromechanical coupling coefficient (K2t) of FBAR was also increased (1.183%) after removal of complete Si. Furthermore, spurious modes are removed, which are due to underlying Silicon. Here, the mechanism has been discussed to understand the effect of underlying Silicon on resonance.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	ZnO, BST, FBAR, Acoustic, MEMS
Subjects:	Semiconductor Devices > Sensors and Nanotechnology
Divisions:	Semiconductor Devices
Depositing User:	Mr. Jitendra Nath Bajpai
Date Deposited:	10 Sep 2021 11:27
Last Modified:	10 Sep 2021 11:27
URI:	http://ceeri.csircentral.net/id/eprint/551

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