Reduced Thickness Strain-Free GaN/InAIN Short Period Superlattice Bottom Cladding for 450 nm Laser Diodes

Paliwal, A and Singh, K and Mathew, M (2019) Reduced Thickness Strain-Free GaN/InAIN Short Period Superlattice Bottom Cladding for 450 nm Laser Diodes. In: XXth International Workshop on Physics of Semiconductor Devices(IWPSD-2019), December, 17-20, 2019, Novotel Hotel And Residences, Kolkata, India.

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Abstract

This work presents the theoretical idea of utilizing strain-free GaN/InAIN short period superlattices (SPSL) as the reduced thickness bottom cladding for the InGaN laser diode (LD) emitting at 450 nm. We have replaced 700 nm n-A10 065Gao 935N bottom cladding with 100 stacks of n-GaN/ n-In018A10.82N SPSL having thickness of 1 nm each, as shown in Fig 1. The refractive index of Ino 18A10.82N is 2.3603 which is far lower than the conventional Alo 06sGao 935N cladding ~ 2.477. Thus, 200 nm SPSL layers are sufficient to achieve the optical field confinement equivalent to the conventional structure. As shown in Fig 2 and 3, the optical field confinement factor in the waveguide of reference LD is 3.28%, with 200 nm SPSL it is 3.43%. However, the strain due to Alo 065Gao 935N cladding is -0.9321 x 10-3 which has been eliminated due to the lattice matched GaN/InAIN SPSL. The L-I characteristic of both the laser diodes remains unchanged, however, the slight increase in resistance at higher applied bias has been observed. The computations are carried out in SiLENSe 5.12 tool.

Item Type: Conference or Workshop Item (Paper)
Subjects: Semiconductor Devices > Optoelectronic Devices
Divisions: Semiconductor Devices
Depositing User: Mr. Jitendra Nath Bajpai
Date Deposited: 27 Aug 2021 07:09
Last Modified: 27 Aug 2021 07:09
URI: http://ceeri.csircentral.net/id/eprint/494

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