Optimization of Aluminum Nitride Sensing Film using Magnetron Assisted Pulsed DC Reactive Sputtering

Sinha, S and Aditi, . and Sinha, SK and Mukhiya, R and Sharma, R and Khanna, VK (2016) Optimization of Aluminum Nitride Sensing Film using Magnetron Assisted Pulsed DC Reactive Sputtering. In: 3rd International Confernece of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2016), 11-15 December 2016, IISC Bangalore. (Submitted)

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Abstract

Performance of potentiometric chemical/biological sensing platforms largely depends upon the sensing film used to detect the concentrations of ions in an electrolyte [1]. Ion-sensitive Field-Effect Transistor (ISFET) is a popular potentiometric sensor which is commonly used as a pH sensor. In ISFET, silicon dioxide can be used as a sensing film but it is prone to hydration and non-linear sensitivity over the wide pH range [2]. These limitations are addressed by using Aluminum Nitride (AlN) as the sensing film which is deposited using magnetron assisted pulsed DC reactive sputtering [3].

Item Type:	Conference or Workshop Item (Poster)
Subjects:	Semiconductor Devices > MEMS and Microsensors
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rohit Singh
Date Deposited:	28 Aug 2017 08:58
Last Modified:	28 Aug 2017 08:58
URI:	http://ceeri.csircentral.net/id/eprint/287

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