Simulation and Characterization of Dual-Gate SOI MOSFET, On-chip Fabricated with ISFET

Yadav, J and Sinha, S and Sharma, A and Chaudhary, R and Mukhiya, R and Sharma, R and Khanna, VK (2015) Simulation and Characterization of Dual-Gate SOI MOSFET, On-chip Fabricated with ISFET. In: 4th International Symposium on VLSI Design & Test (VDAT 2015), June 26-27, 2015, Institute of Technology, Nirma University, Ahmedabad. (Submitted)

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Abstract

The paper presents the process design, simulation and characterization of a silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG MOSFET) with Al metal gate. The proposed structure is an N-channel device, using aluminum nitride (AlN) as gate dielectric. The fully depleted SOI-based DG ISFET compatible with the complementary metal-oxide-semiconductor (CMOS) process is considered to be a very promising bio-chemical sensor. Process design and simulations are performed by using Silvaco® TCAD tool. The simulated and experimental results are compared, and are found to be in good agreement.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Dual-gate SOI MOSFET, Aluminum Nitride (AlN), ISFET
Subjects:	Semiconductor Devices > MEMS and Microsensors
Divisions:	Semiconductor Devices
Depositing User:	Mr. Jitendra Nath Bajpai
Date Deposited:	12 Jan 2017 09:15
Last Modified:	12 Jan 2017 09:15
URI:	http://ceeri.csircentral.net/id/eprint/250

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