FEM Simulation of CMUT Cell for NDT Application

Aditi, . and Mukhiya, R and Gopal, R and Khanna, VK (2011) FEM Simulation of CMUT Cell for NDT Application. In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD - 2011), December 19 - 22, 2011, IIT Kanpur, India. (Submitted)

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Abstract

This paper presents the simulation of various electromechanical performance parameters for an efficient and broadband air coupled Capacitive Micromachined Ultrasonic Transducer (CMUT) for Non Destructive Testing and Evaluation (NDT/NDE) using FEM simulation tool, CoventorWare. The non contact ultrasonic inspection performed in ambient air reduces the complexity and cost. Various critical parameters like collapse voltage, resonant frequency, coupling coefficient, squeeze film damping, bandwidth, quality factor and transient response of the single cell of CMUT are discussed. We employ a hexagonal CMUT cell for the modeling, which has higher packing density.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	CMUT, collapse voltage, NDT/NDE, FEM
Subjects:	?? TK ?? Semiconductor Devices > MEMS and Microsensors
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rohit Singh
Date Deposited:	22 May 2013 09:50
Last Modified:	22 May 2013 09:50
URI:	http://ceeri.csircentral.net/id/eprint/163

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