Determination of Face Terminated Wet Thermal Oxidation Rates in 4H-SiC Substrate


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Gupta, SK and Azam, A and Bhatia, RR and Sonil, RR (2010) Determination of Face Terminated Wet Thermal Oxidation Rates in 4H-SiC Substrate. In: National Conference on Electronic Technology (ECT-2010), April 16-17, 2010, Goa, India. (Submitted)

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The thermal oxidation rate constants on both polar faces (Si-face and C-face) of 4H-SiC have been experimentally investigated.The thermal oxidation was performed in horizontal quartz furnace at different temperature for different oxidation time. The growth rate constants were calculated by fitting the experimentally measured curve (X0 versus t/X0) to the frame of Deal and Grove model. It has been observed that the value of A (one rate constant) increases with decreasing oxidation temperature while the slope of curve B (another rate constant) increases with oxidation temperature. The reported work has significance in the development of 4H-SiC oxidation mechanism for device application. The relevant details are discussed and reported in this paper.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: 4H-SiC, Oxidation mechanism, Rate constants, Si-face and C-face.
Subjects: ?? TK ??
Semiconductor Devices > Sensors and Nanotechnology
Divisions: Semiconductor Devices
Depositing User: Mr. Jitendra Nath Bajpai
Date Deposited: 23 May 2013 07:15
Last Modified: 23 May 2013 07:15

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