Characterization of Titanium Nitride Film for High Power Applications

Kumar, P and Bansal, D and Anuroop, Mr and Mehta, K and Kumar, A and Meena, GS and Rangra, K and Boolchandani, D (2019) Characterization of Titanium Nitride Film for High Power Applications. In: One Day Workshop on Recent Trends in Transducers and Actuators (RTTA-2019), January 21, 2019, CSIR-CEERI, Pilani, India.

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In this paper, Titanium Nitride (TiN) thin film is deposited at room temperature and optimized for high power RF MEMS applications. Being hard, Titanium Nitride is used at contact area. The contact material should have low resistance and high hardness. TiN thin films were deposited by DC Magnetron reactive sputtering using a four inch high purity titanium target in nitrogen (N2) environment. X-ray diffraction (XRD) analysis is used for verification of TiN film. The effect of various N2 pressure on resistivity and hardness of deposited TiN thin film was investigated. Resistivity of the film decreases with N2 percentage and hardness increases with N2 pressure.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Titanium nitride, DC magnetron reactive sputtering, X-ray diffraction (XRD), Sheet resistivity.
Subjects: Semiconductor Devices > MEMS and Microsensors
Divisions: Semiconductor Devices
Depositing User: Mr. Jitendra Nath Bajpai
Date Deposited: 29 Sep 2021 09:27
Last Modified: 29 Sep 2021 09:27

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