Hole Injection Enhancement in InGaN Laser Diodes


Downloads per month over past year

Paliwal, A and Singh, K and Mathew, M (2018) Hole Injection Enhancement in InGaN Laser Diodes. In: International Conference on Fiber Optics and Photonics (PHOTONICS-2018), December 12-15, 2018, IIT Delhi, India.

Download (537Kb) | Preview


Performance of blue laser diode improved by adding 5 nm p-GaN layer prior to electron blocking layer. Decreased polarization discontinuity reduces band bending, which enhances hole transport from 7.698 kA-cm-2 to 8.961 kA-cm-2, reduces electron leakage from 2.546 kA-cm-2 to 0.842 kA-cm2 and laser power improves from 146.54 mW to 204.8 mW at 10 kA-cm-2.

Item Type: Conference or Workshop Item (Paper)
Subjects: Semiconductor Devices > Optoelectronic Devices
Divisions: Semiconductor Devices
Depositing User: Mr. Jitendra Nath Bajpai
Date Deposited: 24 Sep 2021 09:28
Last Modified: 24 Sep 2021 09:28
URI: http://ceeri.csircentral.net/id/eprint/592

Actions (login required)

View Item View Item