Contact Area Design of Ohmic RF MEMS Switch for Enhanced Power Handling


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Anuroop, Mr and Bansal, D and Khushbu, Ms and Kumar, P and Kumar, A and Rangra, K (2018) Contact Area Design of Ohmic RF MEMS Switch for Enhanced Power Handling. In: 12th International Conference on Sensing Technology (ICST-2018), December 4-6, 2018, Limerick, Ireland.

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RF MEMS switches are small in size, consume low power and have good RF response. However, the field deployment of RF MEMS switches is restricted due to limited power handling capability and reliability issues. In literature, power handling is improved through contact area either by adding hard materials or increasing the thickness. In the present paper, calculations for contact area versus stiction forces are performed and RF MEMS ohmic switch with optimal contact area is proposed and fabricated. The power handling of RF MEMS switch is increased by 55.86% without the addition of new material or processing steps. Insertion loss and return loss of the switch are also improved using corner compensation.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Ohmic switch, Power handling, RF MEMS
Subjects: Semiconductor Devices > MEMS and Microsensors
Divisions: Semiconductor Devices
Depositing User: Mr. Jitendra Nath Bajpai
Date Deposited: 24 Sep 2021 09:28
Last Modified: 24 Sep 2021 09:28

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