Influence of High-k and Low-k Dielectrics on Drain Current of GaN HEMTs

Mishra, S and Dhakad, S and Sharma, N and Singh, K and Chauhan, A and Prajapat, P and Chaturvedi, N (2018) Influence of High-k and Low-k Dielectrics on Drain Current of GaN HEMTs. In: International Conference on Computational Mathematics in Nanoelectronics and Astrophysics (CMNA-2018), November 1-3, 2018, Marriott Hotel, Indore.

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Abstract

This paper reports on the influence of high-k and low-k dielectric passivation on the drain current performance of GaN HEMTs. Four different dielectric materials namely SiN,, Al2O3, Hfo2 and SiO2 were deposited and their effect on drain current was compared. Among all the dielectric materials used, the high-k Al2O3 passivation showed the best performance. In this case, the drain current increased by 84%. Even after having the highest k value, HfO2 did not deliver better results than Al2O3 and SiNx. A comparison of PECVD deposited SiO2 (low-k) and SiN, (high-k) showed strong thickness dependent performance.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	High-k and low-k dielectrics, High electron mobility transistor (HEMT), III-V material, Al2O3 and HfO2.
Subjects:	Semiconductor Devices > Sensors and Nanotechnology
Divisions:	Semiconductor Devices
Depositing User:	Mr. Jitendra Nath Bajpai
Date Deposited:	24 Sep 2021 09:27
Last Modified:	24 Sep 2021 09:27
URI:	http://ceeri.csircentral.net/id/eprint/582

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