CMOS Compatible RF MEMS based FBAR for Wireless applications: Design, Model and Simulation

Saini, AK and Bhadauria, A (2013) CMOS Compatible RF MEMS based FBAR for Wireless applications: Design, Model and Simulation. In: First National Conference on Recent Developments in Electronics ( NCRDE 2013), January 18-20, 2013, University of Delhi, New Delhi. (Submitted)

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Abstract

This paper presents the design and finite element 3-D analysis of a CMOS compatible thin film bulk wave resonators (FBARs) consisting zinc oxide (ZnO) with top and bottom electrodes of aluminum (Al). FBARs can be realized by CMOS compatible bulk micromachining process followed by deposition of piezoelectric layer sandwiched by two electrodes. This 3-D analysis has been carried out using finite element method (FEM) based CoventorWare™ tool. In our analysis we have investigated the series and parallel resonances and harmonic response with extraction of equivalent circuit element. The proposed FBAR has been studied for S-band operation.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	CMOS process, Bulk micro machining, RF MEMS, piezoelectric, bulk acoustic wave resonator
Subjects:	?? TK ?? Semiconductor Devices > IC Design
Divisions:	Semiconductor Devices
Depositing User:	Mr. Jitendra Nath Bajpai
Date Deposited:	20 May 2013 09:10
Last Modified:	20 May 2013 09:10
URI:	http://ceeri.csircentral.net/id/eprint/57

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