Development of GaN HEMTs based Biosensor

Chaturvedi, N and Mishra, S and Dhakad, S and Singh, K and Chaurvedi, N and Chauhan, A and Kharbanda, D.K and Khanna, P.K and Sharma, N (2019) Development of GaN HEMTs based Biosensor. In: XIX International Workshop on The Physics of Semiconductor Devices , 2017, December 11-15, 2017, Delhi. (Submitted)

Preview

PDF Download (1098Kb) | Preview

Abstract

In recent years, AlGaN/GaN HEMTs structure has drawn the substantial attention of researchers for biosensing applications. This is primarily due to its outstanding properties such as high n„ high p, higher chemical and thermal stability, higher sensitivity, and non-toxicity to the living cells. In this paper, we are reporting on the development of GaN HEMTs based biosensor for sensing/bio sensing applications.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Key words HEMTs, GaN, Sensor, biosensor, Ohmic
Subjects:	Semiconductor Devices > Sensors and Nanotechnology
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rabin Chatterjee
Date Deposited:	04 Dec 2019 09:16
Last Modified:	04 Dec 2019 09:16
URI:	http://ceeri.csircentral.net/id/eprint/345

Actions (login required)

View Item