Packaging of MEMS Structures using Localized Heating

Bansal, D and Sharma, A and Kaur, M and Dwivedi, P and Rangra, KJ (2012) Packaging of MEMS Structures using Localized Heating. In: Fifth ISSS National Conference on MEMS, Smart Materials, Structures and Systems, September 21-22, 2012, Institute of Smart Structures & Systems (ISSS), Karpagam University, Coimbatore. (Submitted)

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In this paper, eutectic bonding using localized heating for micro-electro-mechanical systems (MEMS) packaging applications is described. Polysilicon line is used as a local heater. The interface of silicon and gold is used for formation of eutectic bonding. Using only 2V source, high temperature (>700ºC) in a bonding region is obtained without heating adjacent structures. Gold-silicon eutectic bond is isolated electrical connections using 1μm thick silicon dioxide layer. Device RF response has negligible effect of packaging using gold-silicon eutectic bonding till 13GHz. Hence, inbuilt custom cavity hermetic encapsulation is possible without heating device area.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Micro-electro-mechanical System (MEMS), wafer-level packaging (WLP), localized heating, resistive heating.
Subjects: ?? TK ??
Semiconductor Devices > MEMS and Microsensors
Divisions: Semiconductor Devices
Depositing User: Mr. Rabin Chatterjee
Date Deposited: 23 May 2013 09:12
Last Modified: 27 May 2013 10:06

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