Large Scale and Cost-effective Realization of Black Silicon and its Applications

Kumar, A and Agarwal, A (2019) Large Scale and Cost-effective Realization of Black Silicon and its Applications. In: International Symposium on Integrated Functionalities (ISIF), 2017, December 10-13, 2017, New Delhi. (Submitted)

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Abstract

Abstract: Metal assisted catalysed etching of Silicon is utilized for large scale production of black silicon; due to texturing of Si surface produced nanowire features. Nanoscale features of Si surface enhance light scattering and absorption of light in wide range UV to IR spectra, consequently Si appears black. Black silicon provides improved antireflection (AR) and light trapping functionality compared to traditional Silicon wafer. Uniform and well-defined single crystalline silicon nanowires were obtained, which have 100 rim and 10-70 pm in diameter and length respectively. Optical Properties of developed black Si investigated by photoluminescence UV-NIR and Raman Spectroscopy. The Raman line shift and photoluminescence spectra of Si nanostructures confirmed quantum confinement effect at nanoscale in black Silicon. In this paper, we discuss depth analysis of MACE mechanism considering the intrinsic properties of Silicon, coating of metal NPs and their methods. Furthermore, transfer of black silicon on flexible substrate and its SERS activity will be discussed.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Keywords: Black Silicon, MACE, Absorbance, Paper electronics and SERS
Subjects:	Semiconductor Devices > Sensors and Nanotechnology
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rabin Chatterjee
Date Deposited:	04 Dec 2019 09:12
Last Modified:	04 Dec 2019 09:12
URI:	http://ceeri.csircentral.net/id/eprint/329

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