Design of contact area for power enhanced RF MEMS ohmic switch

Bansal, D and , A and , K and Rangra, K (2019) Design of contact area for power enhanced RF MEMS ohmic switch. In: National Conference on Complex Engineering Systems of National Importance-2017, October 12-13, 2017, Chandigarh. (Submitted)

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Abstract

Abstruct— RF MEMS switches are small in size, consume low power and have good RF response. However, the field depIoyment of RF MEMS switches is restricted due to limited power handling capability and reliability issues. In literature, power handling is improved through contact area either by adding hard materials or increasing the thickness. In the present paper, calculations for contact area versus stiction forces are performed and RF MEMS oh mic switch with optimal contact area is proposed. The power handing of RF MEMS switch is increased by 55.86 % without ad dition of new material or processing steps. Insertion loss and return loss of the switch are also improved using corner compensation.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Semiconductor Devices > MEMS and Microsensors
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rabin Chatterjee
Date Deposited:	04 Dec 2019 09:06
Last Modified:	04 Dec 2019 09:06
URI:	http://ceeri.csircentral.net/id/eprint/320

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