Ion-Sensitive Field-Effect Transistor as a pH sensor

Sinha, S and Mukhiya, R and Sharma, R and Khanna, VK (2017) Ion-Sensitive Field-Effect Transistor as a pH sensor. In: National Conference on Desalination and Water Purification for Defence and Civil Applications, 22-23 March 2017, Jodhpur. (Submitted)

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Abstract

The paper presents process design and fabrication of an ion-sensitive field-effect transistor (ISFET). The fabricated ISFET structure is an N-channel, depletion-mode device. The standard self-aligned process is adopted and silicon dioxide was used as the sensing film for pH sensing application. The sensitivity of SiO2-ISFET is found to be ~ 33 mV/pH.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	ISFET, Silicon dioxide, pH sensor.
Subjects:	Semiconductor Devices > MEMS and Microsensors
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rohit Singh
Date Deposited:	28 Aug 2017 08:59
Last Modified:	28 Aug 2017 08:59
URI:	http://ceeri.csircentral.net/id/eprint/296

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