Rani, A and Mudgal, T and Dadhich, T and Prakash, V and Dwivedi, M and Sharma, AK and Bhargava, J and Eranna, G
(2011)
Study of Optimization Temperature of Tungsten Oxide (WOx) Thin Films for NH3 Gas Detection.
In: 16th International Workshop on the Physics of Semiconductor Devices (IWPSD - 2011), December 19 - 22, 2011, IIT Kanpur, India.
(Submitted)
Abstract
Metal oxide semiconductors have attracted a lot of attention due to several advantages such as high sensitivity, small size, low cost production, low power consumption and simplicity of fabrication technology and its high compatibility with micro-fabrication. The detection and measurement of flue gases are critical not only for achieving real time process control of new clean combustion systems, but also to minimize their emissions of dangerous air pollutants. Now-a-days ammonia (NH3) gas detection has drawn lot of attention due to its wide industrial applications and also the harmful effect arising due to inhalation of humans even at ppm levels. Tungsten oxides is one of the widely studied materials for the development of solid-state gas sensing devices based on thin and thick films structures. However these oxides require higher temperature to operate them and creation of such high temperature is crucial for these sensors. Combining with MEMS features and WO3 is very attractive to detect NH3 even in the presence of other gases such as H2, CO, CH4. WO3 thin films need a higher temperature range. In this study we found that the temperature in the range of 200 oC to 350 oC is a better option to use it as a good sensing material. By using MEMS technology and suspended platforms such temperature creation is possible. In this paper we report the best operating temperature of 280 oC for detecting the pollutant gases such as NH3 using WO3 thin films.
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