Mittal, S and Makwana, I and Chaturvedi, N and Chaturvedi, N (2013) Role of Sensing Parameters in Breast Cancer Detection using GaN HEMTs. In: International Conference on Emerging Technologies: Micro to Nano (ETMN - 2013), February 23-24, 2013, KK Birla, Goa . (Submitted)
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Abstract
AlGaN/GaN HEMT is a promising device for detection of breast cancer, which operates on the principle of specific binding of c-erbB-2 protein through bio-functionalized layers of Gold and Thioglycolic acid applied on the gate region. In this paper, a simulation based study of the effect of various sensing parameters on device sensitivity is performed using nextnano3 simulation tool. These parameters include interface charge densities, thioglycolic acid concentration and c-erbB-2 concentration. The simulated device exhibits high current sensitivity of the order of 100 μA/mm for 20 μg/ml change in c-erbB-2 concentration in saliva, under practical environmental conditions.
Item Type: | Conference or Workshop Item (Paper) |
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Uncontrolled Keywords: | High electron mobility transistors, biosensor, cancer detection, sensing parameters, c-erbB-2, |
Subjects: | ?? TK ?? Semiconductor Devices > Optoelectronic Devices |
Divisions: | Semiconductor Devices |
Depositing User: | Mr. Rohit Singh |
Date Deposited: | 24 May 2013 06:15 |
Last Modified: | 24 May 2013 06:15 |
URI: | http://ceeri.csircentral.net/id/eprint/19 |
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