Design and Simulation of Single Electron Inverter for Room Temperature Operation

Gupta, AK and Agarwal, PB and Kumar, A (2010) Design and Simulation of Single Electron Inverter for Room Temperature Operation. In: International Conference on Nanoscience & Technology (ICONSAT-2010), February 17-20, 2010, IIT, Bombay, Mumbai. (Submitted)

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Abstract

In this paper, single electron inverter,for room temperature (300 K) operation has been designed and simulated in SIMON 2.0 software. The designed single electron inverter consists of two single electron transistors (SETs) connected in series, sharing common gate voltage. The calculated value of dot capacitance for room temperature operation is 7.750 × 10-20 F. The gate capacitance (CG) is chosen half of this value i. e. 3.875 × 10-20 F for logic operation, while the source (CTS) and drain (CTD) tunnel junction capacitances are taken of equal value 1.936 × 10-20 F. The supply voltages VDD and VSS have been calculated from tunnel and gate capacitances and found to be +1.375 and -1.375 V respectively. The input voltage +0.4 V and -0.4 V are taken for high and low logic and are applied at common terminal of both the gates. The corresponding output voltages, measured at load capacitance are -0.658 V and +0.658 V respectively. In addition to room temperature, the truth table of inverter logic operation at 100K and 200K temperatures is also verified.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Single Electron Transistor (SET), Single Electron Inverter, Single Electron Tunneling Devices, Transfer Characteristic, Room Temperature Operation.
Subjects:	?? TK ?? Semiconductor Devices > IC Design
Divisions:	Semiconductor Devices
Depositing User:	Mr. Jitendra Nath Bajpai
Date Deposited:	20 May 2013 09:40
Last Modified:	20 May 2013 11:47
URI:	http://ceeri.csircentral.net/id/eprint/142

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