Kumar, A and Agarwal, PB and Gupta, SK and Das, S (2010) AFM based Nano-Pattering Process Integrable with Micron size features. In: International Conference on Nanoscience & Technology (ICONSAT-2010), February 17-20, 2010, IIT, Bombay, Mumbai. (Unpublished)
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Abstract
For developing nano-scale devices, nano-patterns and their processes should be compatible and integrablewith the rest of the fabrication processes. Nano-patterning experiments have been carried out using 16-Mercapto Hexadecanoic Acid molecular ink on fabricated smooth gold film surface using Dip-Pen-Nanolithography technique. Process methodologies have been designed to integrate nano-patterns with micron-size interconnection lines and contact pads. Thin Ti(~10nm)/Au(~50 nm) metal films with low roughness (~1nm) have been deposited on SiO2/Si substrates by e-beam evaporation. Micron size pads have been patterned with photolithography followed by metal etching. A small window (6 μm X 6 μm)was opened at the centre of pattern by another photolithography step. Nano-writing process was carried out, through self-assembly of compatible 16-MHA ink on gold surface. Experiments have been carried out with different speeds under varying humidity and temperature conditions. Minimum line width of ~53 nm was estimated from lateral force microscopy image. The experimental results indicate strong potential of AFM -based process in the fabrication of nano-structures such as nano-gap electrodes, which is the basic platform for nanoelectronic/ molecular devices.
Item Type: | Conference or Workshop Item (Paper) |
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Uncontrolled Keywords: | Atomic force microscopy, Dip-Pen Nanolithography,nanopatterning, nano-gap electrodes, nano-electronic/ molecular devices. |
Subjects: | ?? TK ?? Semiconductor Devices > Sensors and Nanotechnology |
Divisions: | Semiconductor Devices |
Depositing User: | Mr. Jitendra Nath Bajpai |
Date Deposited: | 20 May 2013 05:14 |
Last Modified: | 20 May 2013 05:14 |
URI: | http://ceeri.csircentral.net/id/eprint/141 |
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