Fabrication of 980 nm High Power Broad Area Laser Diodes

Singh, K and Mathew, M and Singh, M and Pradhan, N and Sharma, A and Kumar, P and Chauhan, A and Gupta, AK and Pathak, BC and Johri, S (2009) Fabrication of 980 nm High Power Broad Area Laser Diodes. In: International Conference on Optics & Photonics ( ICOP-2009) , October 30 - November 1, 2009, CSIO, Chandigarh. (Submitted)

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In this paper, we have reported the design and fabrication of InGaAs/AlGaAs/GaAs strained layer double quantum well 980 nm broad area laser diodes. The 100 µm wide stripe uncoated laser diode chip with 1000 µm cavity length demonstrated 870 mW CW output power at 1.8A at 250C. The output power was thermally limited due to epi-side mounted. The slope efficiency was ~ 0.7 W/A.

Item Type: Conference or Workshop Item (Paper)
Subjects: ?? TK ??
Semiconductor Devices > Optoelectronic Devices
Divisions: Semiconductor Devices
Depositing User: Mr. Jitendra Nath Bajpai
Date Deposited: 23 May 2013 04:56
Last Modified: 23 May 2013 04:56
URI: http://ceeri.csircentral.net/id/eprint/109

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