Reactive Ion Etching of n-GaN using Cl2/BCl3 for LED Applications


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Mathew, M and Singh, K and Joshi, BC and Sharma, AK and Dhanavantri, C (2009) Reactive Ion Etching of n-GaN using Cl2/BCl3 for LED Applications. In: International Conference on Optics & Photonics (ICOP-2009), October 30 - November 1, 2009, CSIO, Chandigarh. (Submitted)

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Reactive ion etching (RIE) of n-GaN using Cl2/BCl3 plasma under a high self-bias voltage was carried out. The effects of BCl3 flow rate with respect to Cl2 on the etch rate were investigated. An etch rate as high as 50nm/min for n-GaN was obtained under an RF power of 75 W, BCl3 flow rate of 4 sccm, Cl2 flow rate of 20 sccm and a pressure of 5 Pa. The root-mean-square (rms) roughness of the etched surface was between 0.32 and 0.46 nm as determined by atomic force microscopy.

Item Type: Conference or Workshop Item (Paper)
Subjects: ?? TK ??
Semiconductor Devices > Optoelectronic Devices
Divisions: Semiconductor Devices
Depositing User: Mr. Jitendra Nath Bajpai
Date Deposited: 23 May 2013 05:04
Last Modified: 23 May 2013 05:04

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