Effect of parasitic capacitance on ‘OFF/ON’ ratio of RF MEMS capacitive switch

Bansal, D and , K and , A and Kumar, A and Rangra, K (2019) Effect of parasitic capacitance on ‘OFF/ON’ ratio of RF MEMS capacitive switch. In: International Workshop on Physics of Semiconductor Devices(IWPSD) 2017, December 11-15, 2017, New Delhi. (Submitted)

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Abstract

Abstract— Figure of merit for the RF MEMS capacitive switch is decided by ‘ OI°F/ON’ capacitance ratio. There is number of methods reported in the litera- ture to increase the ‘OFF/ON’ i-atio of the switch. Floating metal concept is one among them. "theoretical ratio based on parallel plate calculations is claimed up to 2000. However parasitics capacitance plays a major role in ‘ON’ state ca- pacitance and measured ' OFF/ON’ ratio is less than 100. In present paper, LCR parameters for RF MEMS capacitive switch are extracted considering parasit- ics. Parasitics are independent from switch capacitance/overlap area. ’these are function of switch geometry and substrate material on which switch is fabricat- ed.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Keywords: Capacitance ratio. LCR, Parasitics and RF MEMS switch.
Subjects:	Semiconductor Devices > MEMS and Microsensors
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rabin Chatterjee
Date Deposited:	04 Dec 2019 09:16
Last Modified:	04 Dec 2019 09:16
URI:	http://ceeri.csircentral.net/id/eprint/341

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