Mukhiya, R and Santosh, M and Sharma, A and Kumar, SS and Bose, SC and Gopal, R and Pant, BD
(2019)
Fabrication and Characterization of a Bulk Micromachined
Polysilicon Piezoresistive Accelerometer.
In: International Conference on Advances in Nanomaterials and Devices for Energy and Environment (ICAN-2019), January 27-29, 2019, ABV-IIITM, Gwalior.
Abstract
In this work, the fabrication and characterization of a MEMS bulk micromachined piezoresistive accelerometer. For transduction, polysilicon piezoresistors are used. Polysilicon piezoresistors are preferred over SOI-based silicon piezoresistors because they are cost effective [1]. The accelerometer is designed using FEM-based MEMSCAD tool CoventorWare®. The accelerometer sensor is realized using a hybrid approach of wet and dry bulk micromachining techniques and is shown in Figure 1 (a). <100> bar corner compensation technique [2] was used for the back side bulk micromachining of the accelerometer structure as shown in Figure 1 (b). The developed process is CMOS compatible, and can be extended for CMOS-MEMS integration. Interface electronics required for the Wheatstone bridge signal readout is also presented. The developed sensor is characterized for static and dynamic performance, using nano-indenter and electrodynamic shaker, respectively. From static characterization, stiffness and natural frequency are found to be 7.25 kN/m and 6.78 kHz, respectively. From dynamic characterization, bandwidth and sensitivity are found to be acceleration vs output voltage graph is shown in Figure 1 (c).
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