Hole Injection Enhancement in InGaN Laser Diodes

Paliwal, A and Singh, K and Mathew, M (2018) Hole Injection Enhancement in InGaN Laser Diodes. In: International Conference on Fiber Optics and Photonics (PHOTONICS-2018), December 12-15, 2018, IIT Delhi, India.

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Abstract

Performance of blue laser diode improved by adding 5 nm p-GaN layer prior to electron blocking layer. Decreased polarization discontinuity reduces band bending, which enhances hole transport from 7.698 kA-cm-2 to 8.961 kA-cm-2, reduces electron leakage from 2.546 kA-cm-2 to 0.842 kA-cm2 and laser power improves from 146.54 mW to 204.8 mW at 10 kA-cm-2.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Semiconductor Devices > Optoelectronic Devices
Divisions:	Semiconductor Devices
Depositing User:	Mr. Jitendra Nath Bajpai
Date Deposited:	24 Sep 2021 09:28
Last Modified:	24 Sep 2021 09:28
URI:	http://ceeri.csircentral.net/id/eprint/592

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