Improving Ammonia Sensitivity on Tin Oxide by Annealing Time Optimization

Prajesh, R and Goyal, V and Saini, V and Bhargava, J and Sharma, AK and Agarwal, A (2019) Improving Ammonia Sensitivity on Tin Oxide by Annealing Time Optimization. In: International Workshop on the Physics of Semiconductor Devices (IWPSD 2017), December 11-15, 2017, New Delhi. (Submitted)

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Abstract

Abstract— Tin oxide is one of the most explored thin film materials for gas sensing applications. Sensing properties depend on film’s surface morphology which is tuned by either deposition parameters or by annealing considerations. This work explores the importance of annealing time to get optimum sensing response for tin oxide film. Samples annealed for 1 -5 hours were examined for electrical resistance, surface morphology and gas sensing behavior (10 ppm ammonia). The optimized annealing time is found to be 3 hours at 350°C based on the sensor response and stability over a period of 15 days.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Keywords: Tin oxide, Annealing time, Gas sensing, Electrical resistance.
Subjects:	Semiconductor Devices > Sensors and Nanotechnology
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rabin Chatterjee
Date Deposited:	04 Dec 2019 09:18
Last Modified:	04 Dec 2019 09:18
URI:	http://ceeri.csircentral.net/id/eprint/354

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