Optimization of Individual Single-Junction Cells for the Development of High-Efficiency Ge-GaAs-InGaP Multi-Junction Solar Cells

Madhusudan, M and Pal, S (2012) Optimization of Individual Single-Junction Cells for the Development of High-Efficiency Ge-GaAs-InGaP Multi-Junction Solar Cells. In: International Conference on Renewable Energy Resources for 21st Century - Challenges and Opportunities , March 9 - 10, 2012, Coimbatore, India. (Submitted)

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Abstract

Solar energy- the most abundant source of energy in nature- has been considered a viable solution to solve the energy crisis in the society in long term. High efficiency concentrated multijunction solar cells have the capability to revolutionise the cost structure for photovoltaic power generation. This paper discusses the design and optimization of various single junction cells used in 3 junction solar cells which have recorded the highest efficiencies. The Modern Shockley Queisser limit places the theoretical limit for any single junction solar cell at 33%. The single junctions included in the design are Ge, GaAs and InGaP and the optimizations have been performed using the Silvaco ATLAS TCAD software. The optimizations are made based on the epitaxial layer thickness for base and emitter of each single junction for various values of base and emitter doping. Back surface field layer and window layer are also considered for the cells. Efficiencies of 30.06%, 21.93% and 11.54% have been achieved for the optimized structures of GaAs,InGaP and Ge cells respectively. The efficiencies are at par with the reported results worldwide . The designs have a fill factor >89% for GaAs and InGaP and >70% for Ge cells. The results are obtained for AM 1.5 spectrum under 1 sun illumination at a constant device temperature of 300K.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	?? TK ?? Semiconductor Devices > Optoelectronic Devices
Divisions:	Semiconductor Devices
Depositing User:	Mr. Rohit Singh
Date Deposited:	22 May 2013 09:57
Last Modified:	22 May 2013 09:57
URI:	http://ceeri.csircentral.net/id/eprint/158

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