Simulation of InxGa1-xN based p-i-n Solar Cells

Mathew, M and Shukla, B and Singh, K (2009) Simulation of InxGa1-xN based p-i-n Solar Cells. In: International Conference on Optics & photonics ( ICOP-2009), October 30 - November 1, 2009, CSIO, Chandigarh. (Submitted)

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Abstract

The InGaN alloy system offers a unique opportunity to develop high efficiency solar cells. In this study, p-i-n solar cells consisting of InxGa1..xN are successfully simulated, with Indium fraction varying from x = 0.07 to 0.25. The key properties of InxGa1-xN were simulated by employing PC-1D software, including I-V characteristic, efficiency, band structure, built-in electric field, quantum efficiency etc. The results of the simulation were compared with the results of other fabricated solar cell published in the literature and analyzed the causes of the differences among these results. This work may help the progress in the preparation of the InGaN-based high efficiency solar cells.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	?? TK ?? Semiconductor Devices > Optoelectronic Devices
Divisions:	Semiconductor Devices
Depositing User:	Mr. Jitendra Nath Bajpai
Date Deposited:	23 May 2013 05:07
Last Modified:	23 May 2013 05:07
URI:	http://ceeri.csircentral.net/id/eprint/103

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